- anisotropic etching
- анизотропное травление
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
anisotropic etching
Смотреть что такое "anisotropic etching" в других словарях:
anisotropic etching — anizotropinis ėsdinimas statusas T sritis radioelektronika atitikmenys: angl. anisotropic etching vok. anisotropes Ätzen, n rus. анизотропное травление, n pranc. décapage anisotrope, m … Radioelektronikos terminų žodynas
vertical anisotropic etching isolation — izoliavimas stačiai anizotropiškai ėsdintais grioveliais statusas T sritis radioelektronika atitikmenys: angl. vertical anisotropic etching isolation vok. Isolation mittels vertikaler anisotroper Ätzgraben, f rus. изоляция канавками,… … Radioelektronikos terminų žodynas
vertical anisotropic etching — stačiasis anizotropinis ėsdinimas statusas T sritis radioelektronika atitikmenys: angl. vertical anisotropic etching vok. vertikales anisotropes Ätzen, n rus. вертикальное анизотропное травление, n pranc. décapage vertical anisotrope, m … Radioelektronikos terminų žodynas
Etching (microfabrication) — Etching tanks used to perform Piranha, Hydrofluoric acid or RCA clean on 4 inch wafer batches at LAAS technological facility in Toulouse, France Etching is used in microfabrication to chemically remove layers from the surface of a wafer during… … Wikipedia
Isotropic etching — In semiconductor technology isotropic etching is non directional removal of material from a substrate via a chemical process using an etchant substance. The etchant may be a corrosive liquid or a chemically active ionized gas, known as a… … Wikipedia
Dry etching — refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes… … Wikipedia
Reactive-ion etching — (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High energy ions from the plasma… … Wikipedia
Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… … Wikipedia
Microelectromechanical systems — (MEMS) (also written as micro electro mechanical, MicroElectroMechanical or microelectronic and microelectromechanical systems) is the technology of very small mechanical devices driven by electricity; it merges at the nano scale into… … Wikipedia
Anisotropy — (pronounced with stress on the third syllable, IPAEng|ˌænaɪˈsɒtrəpi) is the property of being directionally dependent, as opposed to isotropy, which means homogeneity in all directions. It can be defined as a difference in a physical property… … Wikipedia
Nano and Micro Devices Center — Established 2008 Type Research Center Chairman Robert Lindquist … Wikipedia
